ENHANCEMENT OF INTERSUBBAND TRANSITION ENERGIES IN GAAS QUANTUM-WELLSBY SI DELTA-DOPING OF HIGH-CONCENTRATION

Authors
SASAGAWA R SUGAWARA H OHNO Y NAKAJIMA H TSUJINO S AKIYAMA H SAKAKI H
Citation
R. Sasagawa et al., ENHANCEMENT OF INTERSUBBAND TRANSITION ENERGIES IN GAAS QUANTUM-WELLSBY SI DELTA-DOPING OF HIGH-CONCENTRATION, Applied physics letters, 72(6), 1998, pp. 719-721
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
6
Year of publication
1998
Pages
719 - 721
Database
ISI
SICI code
0003-6951(1998)72:6<719:EOITEI>2.0.ZU;2-F
Abstract
Intersubband light absorption measurements have been performed on a se ries of GaAs/AlAs quantum wells with heavy delta doping of Si atoms in the range 9.0 x 10(11)-6.5 x 10(12) cm(-2). The increase of intersubb and transition energy by as much as 38 meV has been observed, and attr ibuted to the deepening of the V-shaped potential by the Si layer and to the depolarization effects. (C) 1998 American Institute of Physics.