FREQUENCY OPTIMIZATION OF SI MESFET MODEL WITH PEARSON DISTRIBUTION (FMA)

We present a new analytical model for switching characteristics of Si d-MESFETs using Pearson distribution (FMA) under thermal annealing. Th e analysis is carried out with phosphorus, arsenic and antimony implan ts. The effects of profile shape on the switching characteristics are analysed. A detail investigation of drain-source resistance and time c onstants is reported. The dependence of implant dose and energy has al so been studied. The analysis is further extended to demonstrate the f igure of merit of a FET device which leads to the optimization of devi ce performance in high frequencies.