TOPOGRAPHY SIMULATION FOR INTERCONNECT DEPOSITION

Authors
REY JC LI JL BOKSHA V ADALSTEINSSON D SETHIAN JA
Citation
Jc. Rey et al., TOPOGRAPHY SIMULATION FOR INTERCONNECT DEPOSITION, Solid state technology, 41(2), 1998, pp. 77
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid state technology → ACNP
ISSN journal
0038111X
Volume
41
Issue
2
Year of publication
1998
Database
ISI
SICI code
0038-111X(1998)41:2<77:TSFID>2.0.ZU;2-8
Abstract
New process simulation programs can closely model the complex structur es of ULSI interconnects. Level-set methods simulate and predict the s tructure of evolving surfaces in three dimensions, such as that seen i n thin-film deposition. Models rely upon iterative calibration using e mpirical results. The ramifications of process or design changes can b e predicted, and reliability-related problems such as void formation d uring thin film deposition can be prevented.