DYNAMICAL MEAN-FIELD STUDIES OF METAL-INSULATOR TRANSITIONS

Authors
DOBROSAVLJEVIC V KOTLIAR G
Citation
V. Dobrosavljevic et G. Kotliar, DYNAMICAL MEAN-FIELD STUDIES OF METAL-INSULATOR TRANSITIONS, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 356(1735), 1998, pp. 57-72
Citations number
55
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Philosophical transactions-Royal Society of London. Physical sciences and engineering → ACNP
ISSN journal
09628428
Volume
356
Issue
1735
Year of publication
1998
Pages
57 - 72
Database
ISI
SICI code
0962-8428(1998)356:1735<57:DMSOMT>2.0.ZU;2-D
Abstract
We discuss the successes of the dynamical mean-field (DMF) approach to metal-insulator transitions in both the clean and the disordered Limi t. In the latter case, standard DMF equations are generalized in order to incorporate both the physics of strong correlation and Anderson lo calization effects. The results give new insights into the puzzling fe atures of doped semiconductors.