TUNABLE LOW-DISTORTION BICMOS TRANSCONDUCTANCE AMPLIFIERS

Authors
MAHATTANAKUL J TOUMAZOU C
Citation
J. Mahattanakul et C. Toumazou, TUNABLE LOW-DISTORTION BICMOS TRANSCONDUCTANCE AMPLIFIERS, Electronics Letters, 34(2), 1998, pp. 175-176
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
2
Year of publication
1998
Pages
175 - 176
Database
ISI
SICI code
0013-5194(1998)34:2<175:TLBTA>2.0.ZU;2-T
Abstract
A linear BiCMOS transconductance amplifier based on a MOS transistor o perated in the linear region is presented. The circuit uses regulated cascode techniques to restrict the variation of the drain-source volta ge of the MOS device and hence enhance the linearity of the V-I conver sion. Simulation results confirm that the proposed circuits have super ior linearity compared with other transconductance amplifiers operatin g in the linear region.