LOW-POWER 2.5GBIT S VCSEL DRIVER IN 0.5-MU-M CMOS TECHNOLOGY/

Authors
MADHAVAN B LEVI AFJ
Citation
B. Madhavan et Afj. Levi, LOW-POWER 2.5GBIT S VCSEL DRIVER IN 0.5-MU-M CMOS TECHNOLOGY/, Electronics Letters, 34(2), 1998, pp. 178-179
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
2
Year of publication
1998
Pages
178 - 179
Database
ISI
SICI code
0013-5194(1998)34:2<178:L2SVDI>2.0.ZU;2-K
Abstract
0.5 mu m CMOS technology is used to drive oxide-confined low-threshold current vertical cavity surface emitting laser diodes at 2.5Gbit/s. T he 7 mW power consumption for the optoelectronic transmitter is twenty times less than a 3.6V electronic positive emitter coupled logic tran smit circuit and four times less than a 3.6V electronic low voltage di fferential signal transmit circuit.