P HE ION IMPLANT ISOLATION TECHNOLOGY FOR ALGAN/GAN HFETS/

Authors
HANINGTON G HSIN YM LIU QZ ASBECK PM LAU SS KHAN MA YANG JW CHEN Q
Citation
G. Hanington et al., P HE ION IMPLANT ISOLATION TECHNOLOGY FOR ALGAN/GAN HFETS/, Electronics Letters, 34(2), 1998, pp. 193-195
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
2
Year of publication
1998
Pages
193 - 195
Database
ISI
SICI code
0013-5194(1998)34:2<193:PHIIIT>2.0.ZU;2-I
Abstract
A novel process for the isolation of AlGaN/GaN HFETs is reported, util ising co-implantation of phosphorus and He ions. After implantations, the material sheet resistance is > 10(8) Omega/square, even at tempera tures as high as 200 degrees C. The high resistance is maintained for high temperature anneals > 700 degrees C. HFETs fabricated with this p rocedure exhibit good characteristics.