CURRENT-ACCELERATED CHANNEL HOT-CARRIER STRESS OF MOS-TRANSISTORS

Authors
SAH CT NEUGROSCHEL A HAN KM
Citation
Ct. Sah et al., CURRENT-ACCELERATED CHANNEL HOT-CARRIER STRESS OF MOS-TRANSISTORS, Electronics Letters, 34(2), 1998, pp. 217-219
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
2
Year of publication
1998
Pages
217 - 219
Database
ISI
SICI code
0013-5194(1998)34:2<217:CCHSOM>2.0.ZU;2-E
Abstract
A channel hot carrier current and the failure rate of n- and p-channel MOS transistors are both increased by one to two orders of magnitude by forward biasing the substrate or source pin junction. Correlations with the hydrogen-bond-breaking theory give a threshold kinetic energy of 3.06 +/- 0.05eV for interface trap generation by hot carriers.