SI MEMORY DEVICE OPERATED WITH A SMALL NUMBER OF ELECTRONS BY USING ASINGLE-ELECTRON-TRANSISTOR DETECTOR

Authors
TAKAHASHI Y FUJIWARA A YAMAZAKI K NAMATSU H KURIHARA K MURASE K
Citation
Y. Takahashi et al., SI MEMORY DEVICE OPERATED WITH A SMALL NUMBER OF ELECTRONS BY USING ASINGLE-ELECTRON-TRANSISTOR DETECTOR, Electronics Letters, 34(1), 1998, pp. 45-46
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
1
Year of publication
1998
Pages
45 - 46
Database
ISI
SICI code
0013-5194(1998)34:1<45:SMDOWA>2.0.ZU;2-1
Abstract
A novel Si memory device is proposed, and its fundamental characterist ics are demonstrated. The device uses a MOSFET as a gateway for electr ons transported to and from the memory island. The stored electrons ar e detected by a highly sensitive single-electron transistor. The devic e features ultra-low-power and highspeed operation.