EFFECT OF ELEMENT WIDTH ON ABOVE-THRESHOLD BEHAVIOR OF ANTIGUIDED DIODE-LASER ARRAYS

Authors
BHATTACHARYA A BOTEZ D NABIEV RF
Citation
A. Bhattacharya et al., EFFECT OF ELEMENT WIDTH ON ABOVE-THRESHOLD BEHAVIOR OF ANTIGUIDED DIODE-LASER ARRAYS, Electronics Letters, 34(1), 1998, pp. 84-85
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
1
Year of publication
1998
Pages
84 - 85
Database
ISI
SICI code
0013-5194(1998)34:1<84:EOEWOA>2.0.ZU;2-I
Abstract
The authors analyse the effect of element width on the modal behaviour of resonant antiguided diode laser arrays at high drive levels above threshold. Intra-element gain spatial hole burning causes modes adjace nt to the resonant (in-phase) mode to eventually reach threshold, the onset of which is hastened as element widths get larger than the carri er diffusion length; this is in excellent agreement with experimental observations.