LOW EXCESS NOISE CHARACTERISTICS IN THIN AVALANCHE REGION GAAS DIODES

Authors
LI KF ONG DS DAVID JPR TOZER RC REES GJ ROBSON PN GREY R
Citation
Kf. Li et al., LOW EXCESS NOISE CHARACTERISTICS IN THIN AVALANCHE REGION GAAS DIODES, Electronics Letters, 34(1), 1998, pp. 125-126
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
1
Year of publication
1998
Pages
125 - 126
Database
ISI
SICI code
0013-5194(1998)34:1<125:LENCIT>2.0.ZU;2-R
Abstract
Avalanche noise measurements have been performed on a range of homojun ction GaAs p(+)-i-n(+) and n(+)-i-p(+) diodes with avalanche widths, w ranging from 1.13 to 0.050 mu m. These noise measurements show that, contrary to McIntyre's avalanche noise theory, there is large reductio n in the avalanche noise as w is decreased for both electron and hole initiated impact ionisation.