OPTICAL-RESPONSES OF INGAP GAAS/INGAAS P-CHANNEL DOUBLE-HETEROJUNCTION PSEUDOMORPHIC MODFET/

The authors report on the optical responses of a p-channel In0.49Ga0.5 1P/GaAs/In0.13Ga0.87As pseudomorphic MODFET with a gate length of 1 mu m. The photocurrent of the device is -0.36mA at V-gs = -0.2V and V-ds = -3.5V, with incident optical power of 2.15mW. A significantly high responsivity was obtained at low incident optical power range. Current gain cut-off frequency and maximum available gain cut-off frequency w ere increased by 20 and 10%, respectively, under optical illuminatnon.