PHOTOLUMINESCENCE OF CADMIUM TELLURIDE RECRYSTALLIZED BY NANOSECOND PULSED-LASER IRRADIATION

The influence of nanosecond pulsed laser irradiation on the morphology and low-temperature photoluminescence of n-type CdTe at energy densit ies sufficient to melt the material (0.2-0.5 J/cm(2)) is investigated. After recrystallization the material has an ''orange-peel'' appearanc e. The low-temperature photoluminescence spectrum corresponds to low-g rade single-crystalline p-type CdTe containing a large number of dislo cations and clusters of point defects. The laser treatment has a long- range effect, significantly altering the impurity-defect system in a w ay characteristic of n-->p conductivity conversion at distances greate r than 50 mu m from the site where laser radiation is absorbed. (C) 19 98 American Institute of Physics.