INTRINSIC DEFECT STATES IN PBTE SINGLE-CRYSTAL FILMS GROWN BY LASER-MODULATED EPITAXY

The electrical properties of PbTe/KCl(KBr) layers grown by infrared-la ser-modulated epitaxy and their dependences on conditions of fabricati on (power density of the laser beam W, substrate temperature T-s) have been investigated. It is established that the R-H(T) dependences can be explained within the framework of a two-level model in which one of the levels (E-d1) is in the conduction band and the second level E-d2 is in the band gap. The positions of the energy levels and their dens ity of states depend on the conditions of growth. (C) 1998 American In stitute of Physics.