ON C-V PROFILING NEAR AN ISOTYPIC HETEROJUNCTION

Authors
ZUBKOV VI MELNIK MA SOLOMONOV AV
Citation
Vi. Zubkov et al., ON C-V PROFILING NEAR AN ISOTYPIC HETEROJUNCTION, Semiconductors, 32(1), 1998, pp. 52-53
Citations number
4
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
32
Issue
1
Year of publication
1998
Pages
52 - 53
Database
ISI
SICI code
1063-7826(1998)32:1<52:OCPNAI>2.0.ZU;2-R
Abstract
A method of accurate determination of the majority carrier profile nea r an isotypic heterojunction is proposed. The method takes into accoun t the different values of the dielectric constants on the two sides of the heterojunction. The carrier profile is first calculated from the C-V characteristic and then corrected according to the maximum of p(w) . (C) 1998 American Institute of Physics.