PHOTOELECTRIC PROPERTIES OF N-CDS P-INP HETEROJUNCTIONS/

The polarization method for studying photoactive absorption is used to investigate the photoconversion processes in CdS/InP heterojunctions asa function of the orientation of the indium phosphide substrate. The results of these investigations demonstrate the sensitivity of the ph otoelectric processes to several factors, including the crystallograph ic orientation of the p-type InP substrate and the optical quality of the CdS layer. The induced photopleochroism coefficient of these heter ojunctions increases proportionally to the square of the angle of inci dence (P-I similar to Theta(2)). Such CdS/InP heterojunctions can be e mployed as polarization-photosensitive devices. (C) 1998 American Inst itute of Physics.