PHOTOELECTRIC PROPERTIES OF STRUCTURES BASED ON TLINS2 SINGLE-CRYSTALS

Citation
S. Iida et al., PHOTOELECTRIC PROPERTIES OF STRUCTURES BASED ON TLINS2 SINGLE-CRYSTALS, Semiconductors, 32(1), 1998, pp. 67-70
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
32
Issue
1
Year of publication
1998
Pages
67 - 70
Database
ISI
SICI code
1063-7826(1998)32:1<67:PPOSBO>2.0.ZU;2-K
Abstract
The photovoltaic effect in heterocontacts of various types, viz., In/T IInS2, InSe/TIInS2, and GaSe/ TIInS2, is investigated. The relative ph otoconversion quantum efficiency of these structures is studied as a f unction of the energy of the incident photons and the polarization pla ne of linearly polarized light. It follows from photosensitivity measu rements that the photosensitive structures obtained can be employed as broad-band and selective photosensors of optical radiation. (C) 1998 American Institute of Physics.