The photovoltaic effect in heterocontacts of various types, viz., In/T
IInS2, InSe/TIInS2, and GaSe/ TIInS2, is investigated. The relative ph
otoconversion quantum efficiency of these structures is studied as a f
unction of the energy of the incident photons and the polarization pla
ne of linearly polarized light. It follows from photosensitivity measu
rements that the photosensitive structures obtained can be employed as
broad-band and selective photosensors of optical radiation. (C) 1998
American Institute of Physics.