COMMENSURATE AND INCOMMENSURATE INDIUM PHASES ON A (111)A INAS SURFACE

Citation
Yg. Galitsyn et al., COMMENSURATE AND INCOMMENSURATE INDIUM PHASES ON A (111)A INAS SURFACE, Semiconductors, 32(1), 1998, pp. 78-83
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
32
Issue
1
Year of publication
1998
Pages
78 - 83
Database
ISI
SICI code
1063-7826(1998)32:1<78:CAIIPO>2.0.ZU;2-M
Abstract
Adsorption phases of indium on a (111)A InAs surface are investigated. Three phases are detected: (2x2)(a), (1x1), and the (0.77x0.77) incom mensurate phase. The (0.77x0.77) incommensurate phase is modeled as a densely packed (111) layer of In (fcc) crystal situated in epitaxial r elation to the InAs substrate: [110](In)parallel to[110](InAs). Reason s for the realization of the fee crystal structure are analyzed. It is shown that the incommensurate phase is spatially modulated by the per iodic potential of the substrate. A comparison of our data on indium a dsorption onto (111) InAs with the data in the literature on indium ad sorption onto (111) Si, Ge reveals the importance of relaxation of the elastic strains in the formation of two-dimension adsorption-induced superstructures. (C) 1998 American Institute of Physics.