Adsorption phases of indium on a (111)A InAs surface are investigated.
Three phases are detected: (2x2)(a), (1x1), and the (0.77x0.77) incom
mensurate phase. The (0.77x0.77) incommensurate phase is modeled as a
densely packed (111) layer of In (fcc) crystal situated in epitaxial r
elation to the InAs substrate: [110](In)parallel to[110](InAs). Reason
s for the realization of the fee crystal structure are analyzed. It is
shown that the incommensurate phase is spatially modulated by the per
iodic potential of the substrate. A comparison of our data on indium a
dsorption onto (111) InAs with the data in the literature on indium ad
sorption onto (111) Si, Ge reveals the importance of relaxation of the
elastic strains in the formation of two-dimension adsorption-induced
superstructures. (C) 1998 American Institute of Physics.