CHARACTERIZATION OF GAAS INXGA1-XAS QUANTUM-DOT HETEROSTRUCTURES BY ELECTRICAL AND OPTICAL METHODS/

Results of electrical and optical studies of GaAs/InxGa1-xAs heterostr uctures are reported. The aim of these studies was to identify the qua ntum dots and develop a technology of their growth by spontaneous tran sformation of an InxGa1-xAs layer. The surface charge at the depth of the quantum dots and their surface density as a function of the deposi tion time of this narrow-band material are estimated by C-V profiling. A photoluminescence study of the quantum dots revealed peculiarities of the filling of their electron states at various excitation levels. The influence of Coulomb interactions on the optical properties of the quantum dots is discussed. (C) 1998 American Institute of Physics.