RELATION BETWEEN THE OPTOELECTRONIC PARAMETERS OF AMORPHOUS HYDROGENATED SILICON FILMS DEPOSITED AT HIGH-TEMPERATURES AND THEIR MICROSTRUCTURE

Authors
ADRIAENSSENS GJ GREVENDONK W GOLIKOVA OA
Citation
Gj. Adriaenssens et al., RELATION BETWEEN THE OPTOELECTRONIC PARAMETERS OF AMORPHOUS HYDROGENATED SILICON FILMS DEPOSITED AT HIGH-TEMPERATURES AND THEIR MICROSTRUCTURE, Semiconductors, 32(1), 1998, pp. 109-111
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
32
Issue
1
Year of publication
1998
Pages
109 - 111
Database
ISI
SICI code
1063-7826(1998)32:1<109:RBTOPO>2.0.ZU;2-0
Abstract
The optical modulation spectra and photoconductivity of a number of a- Si:H films containing 5-6at.% hydrogen with different microstructure p arameters (R = 0.2-0.8) have been investigated. Information about the defect density in the films, spreading of band edges (tailing), the ga p width, and the product of the mobility and the lifetime of the elect rons has been obtained. The microstructure is shown to have a substant ial effect on the optoelectronic parameters of films with low hydrogen content. (C) 1998 American Institute of Physics.