GENERATION IN A MICROSTRIP-RESONATOR-STABILIZED DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE

Generation in a microstrip-resonator-stabilized double-barrier resonan t tunneling structure based on GaAs/AlAs heterostructures has been inv estigated for the first time. The structures fabricated contain near-c ontact layers (spacers) that prevent impurities from penetrating into the active part of the structure and improve the temporal characterist ics of the system. AuNiGe alloy microstrip contacts, which connect the structure with an external rf circuit, were prepared in a planar impl ementation, making it possible to minimize the RC delay time in the ne gative differential conductance region by decreasing the series resist ance and capacitance of the structure. In structures with spacer layer s, the negative differential conductance exhibits a complex behavior d ue to the influence of the space charge. (C) 1998 American Institute o f Physics.