FOCAL PHOTODETECTOR ARRAYS BASED ON CDHGTE HETEROEPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES

This paper describes a technology for fabricating photodetector arrays with a 32 X 32 and 128 X 128 format, based on HgCdTe/CdTe/GaAs hetero structure diodes grown by molecular-beam epitaxy. The technology is de monstrated for hybrid assembly with a multiplexer with continuous moni toring of the process of cold welding of indium posts. The threshold p ower of the elements of a photodetector device with a 128 X 128 format with a long-wavelength photosensitivity limit of 10.4 and 5.2 mu m eq uals 1.7 X 10(-13) and 1.1 x 10(-14) W/Hz(1/2), respectively. The nois e-equivalent temperature difference in the frame field equalled 0.077 K when the background temperature was 293 K. (C) 1998 The Optical Soci ety of America.