SOLID-SOLUTION INXGA1-XASYSBZP1-Y-Z - A NEW MATERIAL FOR INFRARED OPTOELECTRONICS .1. THERMODYNAMIC ANALYSIS OF THE CONDITIONS FOR OBTAINING SOLID-SOLUTIONS, ISOPERIODIC TO INAS AND GASB SUBSTRATES, BY LIQUID-PHASE EPITAXY

Citation
Na. Charykov et al., SOLID-SOLUTION INXGA1-XASYSBZP1-Y-Z - A NEW MATERIAL FOR INFRARED OPTOELECTRONICS .1. THERMODYNAMIC ANALYSIS OF THE CONDITIONS FOR OBTAINING SOLID-SOLUTIONS, ISOPERIODIC TO INAS AND GASB SUBSTRATES, BY LIQUID-PHASE EPITAXY, Semiconductors, 31(4), 1997, pp. 344-349
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
31
Issue
4
Year of publication
1997
Pages
344 - 349
Database
ISI
SICI code
1063-7826(1997)31:4<344:SI-ANM>2.0.ZU;2-D
Abstract
The diagrams of melt-solid solution (fusibility curves) and solid solu tion (I)-solid solution (II) (surfaces of spinodal decomposition of so lid solutions) phase equilibria in the five-component system In-Ga-As- Sb-P (the solid solutions are isoperiodic to the GaSb and InAs substra tes) are calculated. The concentration ranges of the isovalent substit ution solid solutions InxGa1-xAsySbzP1-y-z, which are accessible for s ynthesis by liquid-phase epitaxy, are calculated. (C) 1997 American In stitute of Physics.