INTENSE PHOTOLUMINESCENCE OF POROUS LAYERS OF SIC FILMS GROWN ON SILICON SUBSTRATES

Luminescing porous layers have been prepared on SiC films grown on sil icon substrates. The intensity of the photoluminescence increases very strongly as a result of electrolytic oxidation of porous layers. The spectrum of the pulsed photoluminescence consists of a series of overl apping bands from 1.8 to 3.3 eV. Investigations of the initial SiC fil ms showed that they are nonstoichiometric and strongly disordered. Non etheless, the intensity of the photoluminescence of the oxidized porou s layers is much higher than can be obtained from correspondingly trea ted SiC crystals or crystalline films. (C) 1997 American Institute of Physics.