MODELING OF MASS-TRANSFER UNDER CONDITIONS OF LOCAL GAS-PHASE EPITAXYTHROUGH A MASK

Authors
PROEKT LB KALITEEVSKII MA KANTOR VB PIOTROVSKII DA SINITSYN MA YAVICH BS
Citation
Lb. Proekt et al., MODELING OF MASS-TRANSFER UNDER CONDITIONS OF LOCAL GAS-PHASE EPITAXYTHROUGH A MASK, Semiconductors, 31(4), 1997, pp. 401-404
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
4
Year of publication
1997
Pages
401 - 404
Database
ISI
SICI code
1063-7826(1997)31:4<401:MOMUCO>2.0.ZU;2-B
Abstract
The diffusion mass transfer of reagents under the conditions of local gas-phase epitaxy through a mask has been studied by the method of num erical modeling. The possible effect of adsorption of reagents on the surface of the mask and their surface diffusion on the local growth ra te is studied. The computational results are compared with published e xperimental data. (C) 1997 American institute of Physics.