PHOTOCONDUCTIVITY OF THE GERMANIUM-DOPED SOLID-SOLUTION P-GAAS0.94SB0.06

Authors
ALLEN TY POLYANSKAYA TA KOPYLOV AA SHAKMAEV AA
Citation
Ty. Allen et al., PHOTOCONDUCTIVITY OF THE GERMANIUM-DOPED SOLID-SOLUTION P-GAAS0.94SB0.06, Semiconductors, 31(4), 1997, pp. 405-406
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
4
Year of publication
1997
Pages
405 - 406
Database
ISI
SICI code
1063-7826(1997)31:4<405:POTGSP>2.0.ZU;2-K
Abstract
A new mechanism of impurity photoconductivity in semiconductors has be en discovered. The form of the long-wavelength photoconductivity spect ra observed in p-GaAs0.94Sb0.06:Ge is satisfactorily explained in term s of resonance ionization of impurity levels by phonons excited during absorption of infrared radiation. (C) 1997 American Institute of Phys ics.