NEUTRON-ACTIVATION ANALYSIS OF THE IMPURITY COMPOSITION OF GALLIUM-ARSENIDE BASED SEMICONDUCTOR STRUCTURES

Authors
DUTOV AG KOMAR VA SHIRYAEV SV SMAKHTIN LA
Citation
Ag. Dutov et al., NEUTRON-ACTIVATION ANALYSIS OF THE IMPURITY COMPOSITION OF GALLIUM-ARSENIDE BASED SEMICONDUCTOR STRUCTURES, Semiconductors, 31(4), 1997, pp. 415-417
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
4
Year of publication
1997
Pages
415 - 417
Database
ISI
SICI code
1063-7826(1997)31:4<415:NAOTIC>2.0.ZU;2-2
Abstract
The impurity composition of gallium arsenide slabs has been investigat ed using the highly sensitive method of neutron-activation analysis. T he content of Se, Cr, Ag, Fe, Zn, Co, and Sb in the slabs as well as v ariations of the content of these impurities for different batches of slabs were determined. It is shown that neutron-activation analysis ca n be used, together with layerwise chemical etching, to study the volu me distribution of impurity elements in gallium-arsenide-based semicon ductor structures. (C) 1997 American Institute of Physics.