EFFECT OF LASER-RADIATION ON THE ELECTRONIC DENSITY-OF-STATES OF AN (INSULATOR GALLIUM-ARSENIDE) INTERFACE

Authors
VOZMILOVA LN GAMAN VI KALYGINA VM PANIN AV SMIRNOVA TP
Citation
Ln. Vozmilova et al., EFFECT OF LASER-RADIATION ON THE ELECTRONIC DENSITY-OF-STATES OF AN (INSULATOR GALLIUM-ARSENIDE) INTERFACE, Semiconductors, 31(4), 1997, pp. 418-422
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
4
Year of publication
1997
Pages
418 - 422
Database
ISI
SICI code
1063-7826(1997)31:4<418:EOLOTE>2.0.ZU;2-4
Abstract
The effect of annealing with pulsed laser radiation with wavelengths o f 0.69 and 308 mu m on the capacitance-voltage and conductance-voltage characteristics and the density of surface states at the insulator-(n , p)-GaAs interface as a function of the radiation energy density has been investigated. (C) 1997 American Institute of Physics.