ANALYSIS OF GE SEGREGATION IN SI USING A SIMULTANEOUS GROWTH AND EXCHANGE MODEL

Authors
GODBEY DJ ANCONA MG
Citation
Dj. Godbey et Mg. Ancona, ANALYSIS OF GE SEGREGATION IN SI USING A SIMULTANEOUS GROWTH AND EXCHANGE MODEL, Surface science, 395(1), 1998, pp. 60-68
Citations number
15
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
395
Issue
1
Year of publication
1998
Pages
60 - 68
Database
ISI
SICI code
0039-6028(1998)395:1<60:AOGSIS>2.0.ZU;2-7
Abstract
Ge segregation data is analyzed using a. simultaneous growth and excha nge model in the limit of infinite surface diffusion. This model is fo und to predict a longer leading edger an enlarged surface Ge storage r eservoir and a better temperature dependence than the previously descr ibed two-layer model. This suggests;hat surface diffusion and rearrang ement plays a more important role in Ge segregation than believed here tofore. (C) 1998 Elsevier Science B.V.