IN-SITU CHARACTERIZATION OF THE P-SI NH4F INTERFACE DURING DISSOLUTION IN THE CURRENT OSCILLATIONS REGIME/

Authors
CATTARIN S CHAZALVIEL JN DAFONSECA C OZANAM F PETER LM SCHLICHTHORL G STUMPER J
Citation
S. Cattarin et al., IN-SITU CHARACTERIZATION OF THE P-SI NH4F INTERFACE DURING DISSOLUTION IN THE CURRENT OSCILLATIONS REGIME/, Journal of the Electrochemical Society, 145(2), 1998, pp. 498-502
Citations number
31
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
145
Issue
2
Year of publication
1998
Pages
498 - 502
Database
ISI
SICI code
0013-4651(1998)145:2<498:ICOTPN>2.0.ZU;2-#
Abstract
Several physicochemical properties of the p-Si/NH4F interface have bee n monitored by in situ techniques in the regime of current oscillation s. Comparison of evolution of infrared absorption, microwave reflectiv ity, electrode admittance, electron injection rate shows interesting c orrelations. An integrated description of the processes involved is at tempted on the basis of the current models for the Si/acidic fluoride interface.