INTERFACE STATE CAPTURE CROSS-SECTION MEASUREMENTS ON VACUUM ANNEALEDAND RADIATION DAMAGED SI-SIO2 SURFACES

The conductance technique can be used to separate two types of fast in terface state differentiated by a factor of about 20 ratio in capture cross section. By comparing vacuum annealed oxides, which are dominate d by P-b defects, with radiation damaged oxides, we infer that the two types are acceptor and donor states. The conductance measurements are unable to separate P-b0 and P-b1 on the (100) surface. In vacuum anne aled samples, the conductance peak broadening is dominated by surface potential fluctuations, whereas radiation damaged samples have an intr insically broadened cross section over and above that due to the poten tial fluctuations.