ELECTRICAL-PROPERTIES OF SC SCHOTTKY-BARRIER DIODES FABRICATED ON ARGON-ION SPUTTERED P-GAAS

Authors
GOODMAN SA AURET FD DEENAPANRAY PNK MYBURG G
Citation
Sa. Goodman et al., ELECTRICAL-PROPERTIES OF SC SCHOTTKY-BARRIER DIODES FABRICATED ON ARGON-ION SPUTTERED P-GAAS, JPN J A P 2, 37(1AB), 1998, pp. 10-12
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
37
Issue
1AB
Year of publication
1998
Pages
10 - 12
Database
ISI
SICI code
Abstract
Epitaxially grown p-GaAs wafers were bombarded with Ar-ions before the deposition of scandium (Sc) on them. Current-voltage (I-V) measuremen ts of these Schottky barrier diodes showed that the barrier height, se ries resistance and ideality factor were increased as the Ar-ion fluen ce was increased.