IMPROVEMENT OF EFFECTIVE CHARGES IN OXYNITRIDE PREPARED BY LIQUID-PHASE DEPOSITION ON SILICON

Using an aqueous solution of ammonia hydroxide aqua, hydrosilicofluori c acid and boric acid, an oxynitride film can be grown. Nitrogen atoms are accumulated at the interface of the oxynitride film and silicon s ubstrate. With subsequent thermal annealing in nitrogen, the effective oxide charges of the oxynitride can be improved.