MICROSTRUCTURE OF POLYSILICON FILMS GROWN BY CATALYTIC CHEMICAL-VAPOR-DEPOSITION METHOD

Citation
Aq. He et al., MICROSTRUCTURE OF POLYSILICON FILMS GROWN BY CATALYTIC CHEMICAL-VAPOR-DEPOSITION METHOD, JPN J A P 1, 37(1), 1998, pp. 92-93
Citations number
9
Categorie Soggetti
Physics, Applied
Volume
37
Issue
1
Year of publication
1998
Pages
92 - 93
Database
ISI
SICI code
Abstract
The catalytic chemical vapor deposition (cat-CVD), often called ''hot- wire CVD'', is a new method of growing polycrystalline silicon (poly-S i) films at low temperatures. The microstructure of such cat-CVD poly- Si films is investigated by high-resolution transmission electron micr oscopy. The main microstructural features of these poly-Si films are n anometer-diameter columnar crystalline grains surrounded by a very thi n amorphous phase. Good electrical properties, such as large carrier m obilities of the films, may be attributed to this microstructure.