ARF-EXCIMER-LASER ANNEALING OF 3C-SIC FILMS

Boron-doped 3C-SiC films grown by thermal chemical vapor deposition (C VD) at 950 degrees C using an infrared lamp were annealed using an ArF excimer laser (193 nm). The crystal quality was studied using reflect ion high-energy electron diffraction (RHEED). and the surface morpholo gy was studied using a scanning electron microscope (SEM). It was demo nstrated that both the crystal quality and the surface morphology were improved after irradiation of three laser pulses with an energy densi ty of 1.4-1.6 J/cm(2) per pulse.