MICRODEFECTS IN AN AS-GROWN CZOCHRALSKI SILICON CRYSTAL STUDIED BY SYNCHROTRON-RADIATION SECTION TOPOGRAPHY WITH AID OF COMPUTER-SIMULATION

Grown-in microdefects of a Czochralski (CZ) silicon crystal grown at a slow growth rate were studied by section topography using high energy synchrotron radiation. Images of the microdefects in the section topo graphs were analyzed quantitatively using computer simulation based on the Takagi-Taupin type dynamical diffraction theory of X-rays, and re produced successfully by the simulation when the microdefects were ass umed to be spherical strain centers. Sizes and positions of the microd efects were able to be determined by detailed comparison between the e xperiments and the computer simulations. The validity of the computer simulation in an analysis of the section topographs is discussed.