EPITAXIAL-GROWTH OF SRF2 ON ZNSE(100) EPITAXIAL-FILMS

Authors
SARINANTO MM TSUTSUI K
Citation
Mm. Sarinanto et K. Tsutsui, EPITAXIAL-GROWTH OF SRF2 ON ZNSE(100) EPITAXIAL-FILMS, JPN J A P 1, 37(1), 1998, pp. 253-254
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
37
Issue
1
Year of publication
1998
Pages
253 - 254
Database
ISI
SICI code
Abstract
Epitaxial SrF2 films were grown on ZnSe(100) epitaxial substrates usin g molecular beam epitaxy (MBE), and their crystallinity dependent on g rowth temperature was characterized using X-ray diffraction and Ruther ford backscattering spectroscopy. SrF2 film with good crystallinity wa s obtained at the growth temperature of 250 degrees C.