HETEROEPITAXIAL GROWTH OF CDF2 LAYERS ON CAF2 SI(111) BY MOLECULAR-BEAM EPITAXY/

The effects of growth temperature and structural perfection of the CaF 2 buffer layer on the crystallinity of CdF2 layers grown on CaF2/Si(11 1) substrates by molecular beam epitaxy (MBE) were investigated by dou ble-crystal X-ray diffractometry (XRD). The crystal perfection of CdF2 layers grown on pseudomorphic CaF2 layers was considerably better tha n that of CdF2 layers grown on relaxed CaF2 layers. It was shown that epitaxial CdF2 films with high structural quality can be grown on the. pseudomorphic CaF2 layer at growth temperatures as low as 50 degrees C.