EFFECTS OF IRRADIATION ON GAALAS-GAAS AND INGAASP-INP LASERS

Authors
ZHURAVLEVA OV KURNOSOV VD SHVEIKIN VI
Citation
Ov. Zhuravleva et al., EFFECTS OF IRRADIATION ON GAALAS-GAAS AND INGAASP-INP LASERS, Quantum electronics, 27(9), 1997, pp. 753-755
Citations number
12
Journal title
Quantum electronics → ACNP
ISSN journal
10637818
Volume
27
Issue
9
Year of publication
1997
Pages
753 - 755
Database
ISI
SICI code
1063-7818(1997)27:9<753:EOIOGA>2.0.ZU;2-F
Abstract
An investigation was made of the radiation strength of GaAlAs-GaAs and InGaAsP-InP semiconductor lasers. This strength fell with increase in the laser emission wavelength. The highest radiation strength was obs erved for semiconductor lasers emitting at the wavelength of 0.85 mu m .