THE EFFECT OF ALLOY SCATTERING ON THE MOBILITY OF HOLES IN A SI1-XGEXQUANTUM-WELL

Authors
KEARNEY MJ HORRELL AI
Citation
Mj. Kearney et Ai. Horrell, THE EFFECT OF ALLOY SCATTERING ON THE MOBILITY OF HOLES IN A SI1-XGEXQUANTUM-WELL, Semiconductor science and technology, 13(2), 1998, pp. 174-180
Citations number
31
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
13
Issue
2
Year of publication
1998
Pages
174 - 180
Database
ISI
SICI code
0268-1242(1998)13:2<174:TEOASO>2.0.ZU;2-N
Abstract
The effect of alloy scattering on the mobility of holes in a Si1-xGex quantum well is considered from a theoretical perspective. Issues rela ting to the definition and value of the alloy potential are discussed, and results are presented showing how the alloy scattering component of the overall mobility varies with temperature, carrier density and a lloy concentration. Screening is allowed for and found to be important at low temperatures. By considering other scattering mechanisms such as interface impurities, surface roughness and acoustic phonons, we ar gue that alloy scattering is not a significant limiting factor as rega rds device applications, contrary to recent claims.