COMBINED OSCILLATIONS OF MAGNETORESISTANCE DUE TO INELASTIC AND ELASTIC SCATTERINGS IN INAS ALGASB QUANTUM-WELL STRUCTURES/

Magnetoresistance of a two-dimensional electron gas in Si- and non-dop ed InAs/AlGaSb quantum wells was measured for a wide range of temperat ure. At low temperatures, the Shubnikov-de Haas (SdH) oscillation was observed for both samples, and the Fourier analysis of the SdH oscilla tion reveals that electrons are populated in two subbands for the Si-d oped sample, while only the lowest subband is occupied in the non-dope d sample. At high temperatures, a weak oscillation with a fundamental field of B-0 approximate to 6.3 T was observed in the non-doped sample , which is attributed to the magnetophonon resonances (MPR). For the S i-doped sample, on the other hand, combined oscillations of magnetores istance due to the magnetophonon and the magneto-intersubband-scatteri ng (MIS) effects were observed.