TEMPERATURE-DEPENDENCE OF THE OPTICAL-ENERGY GAP AND THERMOELECTRIC STUDIES OF TLINS2 CRYSTALS

Authors
Citation
Ga. Gamal, TEMPERATURE-DEPENDENCE OF THE OPTICAL-ENERGY GAP AND THERMOELECTRIC STUDIES OF TLINS2 CRYSTALS, Semiconductor science and technology, 13(2), 1998, pp. 185-189
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
13
Issue
2
Year of publication
1998
Pages
185 - 189
Database
ISI
SICI code
0268-1242(1998)13:2<185:TOTOGA>2.0.ZU;2-X
Abstract
A single crystal of TlInS2 was prepared by a new crystal growth techni que. The interband absorption coefficients were measured, near the fun damental absorption edge, as a function of the wavelength of the incid ent photons at various temperatures. The energy gap E-g is temperature dependent and the absorption edge shifts to lower energy values with increasing temperature. The energy gap, at room temperature, was found to be 2.24 eV. The dependence of the energy gap on temperature is lin ear in the temperature range 77 to 300 K with a negative temperature c oefficient dE(g)/dT equal to 1.87 x 10(-4) eV K-1. The thermoelectric phenomenon is also investigated. On the basis of a two-band model the results are discussed.