Ga. Gamal, TEMPERATURE-DEPENDENCE OF THE OPTICAL-ENERGY GAP AND THERMOELECTRIC STUDIES OF TLINS2 CRYSTALS, Semiconductor science and technology, 13(2), 1998, pp. 185-189
A single crystal of TlInS2 was prepared by a new crystal growth techni
que. The interband absorption coefficients were measured, near the fun
damental absorption edge, as a function of the wavelength of the incid
ent photons at various temperatures. The energy gap E-g is temperature
dependent and the absorption edge shifts to lower energy values with
increasing temperature. The energy gap, at room temperature, was found
to be 2.24 eV. The dependence of the energy gap on temperature is lin
ear in the temperature range 77 to 300 K with a negative temperature c
oefficient dE(g)/dT equal to 1.87 x 10(-4) eV K-1. The thermoelectric
phenomenon is also investigated. On the basis of a two-band model the
results are discussed.