ALGAASSB ALASSB MICROCAVITY DESIGNED FOR 1.55-MU-M AND GROWN BY MOLECULAR-BEAM EPITAXY/

Authors
KOHL A HARMAND JC OUDAR JL RAO EVK KUSZELEWICZ R DELPON EL
Citation
A. Kohl et al., ALGAASSB ALASSB MICROCAVITY DESIGNED FOR 1.55-MU-M AND GROWN BY MOLECULAR-BEAM EPITAXY/, Electronics Letters, 33(8), 1997, pp. 708-710
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
8
Year of publication
1997
Pages
708 - 710
Database
ISI
SICI code
0013-5194(1997)33:8<708:AAMDF1>2.0.ZU;2-I
Abstract
The first AlGaAsSb/AlAsSb microactivity structure was grown by solid s ource molecular beam epitaxy on an InP substrate. The reflectivity spe ctrum shows a clear resonance at 1.55 mu m below a 0.997 reflectivity plateau with a 190 nm wide stopband. A detailed analysis of this spect rum suggests a growth rate stability of better than 1% over the 7.5 h of growth. To investigate the quality of the structure the photolumine scence spectrum was also obtained.