HIGH-FREQUENCY GAINP GAAS HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTOR WITH TOW OFFSET VOLTAGE/

Authors
OU HJ HSU CC YANG YF YANG ES
Citation
Hj. Ou et al., HIGH-FREQUENCY GAINP GAAS HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTOR WITH TOW OFFSET VOLTAGE/, Electronics Letters, 33(8), 1997, pp. 714-716
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
8
Year of publication
1997
Pages
714 - 716
Database
ISI
SICI code
0013-5194(1997)33:8<714:HGGHBW>2.0.ZU;2-A
Abstract
A carbon doped GaInP/GaAs heterostructure-emitter bipolar transistor ( HEBT) grown by MOCVD is reported with high RF performance. A cutoff fr equency of 50 GHz and maximum oscillation frequency of 90 GHz were obt ained for the device. An offset voltage as low as 90 mV was achieved. It is shown that the GaInP/GaAs HEBT with a high frequency and a low o ffset voltage is a good candidate for low battery power device applica tions.