HIGH REFLECTIVITY, LOW-RESISTANCE TE DOPED ALGAASSB ALASSB BRAGG MIRROR/

Authors
DIAS IFL NABET B KOHL A HARMAND JC
Citation
Ifl. Dias et al., HIGH REFLECTIVITY, LOW-RESISTANCE TE DOPED ALGAASSB ALASSB BRAGG MIRROR/, Electronics Letters, 33(8), 1997, pp. 716-717
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
8
Year of publication
1997
Pages
716 - 717
Database
ISI
SICI code
0013-5194(1997)33:8<716:HRLTDA>2.0.ZU;2-Z
Abstract
The authors report a high quality n-type Te-doped AlGaAsSb/AlAsSb Brag g mirror lattice matched to InP grown by molecular beam epitaxy. A 99. 8% reflectivity with a 190 nm stopband width centred at 1.51 mu m is o btained. An average voltage drop of 44 mV per period at a current dens ity of 1 kA/cm(2) is observed for a mean electron concentration of sim ilar to 3.5 x 10(18) cm(-3).