P. Maass et P. Pendzig, THE DYNAMIC STRUCTURE MODEL AND THE DECOUPLING OF SECONDARY RELAXATIONS NEAR THE GLASS-TRANSITION, Solid state ionics, 105(1-4), 1998, pp. 217-224
We present a microscopic formulation of the memory effect as proposed
by the dynamic structure model [17,18] by considering the hopping of a
charged particle among two sites in the presence of a locally rearran
ging structural environment. The state of the environment of each site
is described by a structural variable, which prefers to assume differ
ent values if the site is occupied or vacant, and it varies in time ac
cording to an overdamped Brownian dynamics. We find that the dipolar r
elaxation strongly depends on how the bare jump frequency nu of the pa
rticle and the characteristic structural relaxation time tau(s) of its
environment relate to each other. For nu tau(s) << 1 the imaginary pa
rt of the dielectric susceptibility chi''(omega) exhibits a single pea
k pattern, while for nu tau(s) greater than or equal to 1 a second, sm
aller peak appears at higher frequencies, which becomes more separated
from the first peak with increasing nu tau(s). It is suggested that t
his behaviour provides an explanation for the decoupling phenomenon of
secondary beta-relaxations from the main primary alpha-relaxations cl
ose to a glass transition.