HIGH GAS-PRESSURE FOR HTS SINGLE-CRYSTALS AND THIN-LAYER TECHNOLOGY

The properties of single crystals and thin/thick layers of high-T-c su perconductors (HTS, up to 135 K) made under equilibrium (p, T) conditi ons of vapour and oxygen are presented, The special high gas pressure apparatus combined with a method of avoiding impurities from the outer volume of the crucible was designed and successfully applied in high pressure experiments. This apparatus was used successfully in experime nts with active gases such as oxygen and nitrogen, as well as chloride s, heavy metals, sulphur, fluoride, potassium, sodium and oxides, whch all produce very high partial pressure, As a result we obtained large single crystals of the mercury family of HTS compounds, The obtained single crystals and thin layers reveal a high chemical stability, whic h suggests their possible future application as superconducting microe lectronic devices, The method presented has been successfully applied to obtain other compounds, e.g. (the HgTl-HTS family), YBCO, infinite layer and FeS2 applied for modern thin layer photovoltaic cells.