STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGE-IMPLANTED AND SI-IMPLANTED SILICON DIOXIDE

The photoluminescence (PL) and electroluminescence (EL) properties of Ge-implanted SiO2 films thermally-grown on a Si substrate have been in vestigated and compared to those of Si-implanted SiO2 films. It is fou nd that the blue-violet PL from both Si and Ge-rich layers reaches a m aximum after annealing at 500 degrees C for 30 min. The PL and EL from Ge-implanted SiO2 are distinctly higher than that from Si-implanted l ayers and well visible for the naked eye. The EL spectrum from the Ge- implanted oxide annealed at 1000 degrees C correlates very well with t he PL one and shows a linear dependence on the injected current. The n eutral oxygen vacancy is assumed to be responsible for the observed lu minescence. In the case of Ge the microstructure after high temperatur e annealing is studied.