STUDY ON THE ELECTRICAL-CONDUCTION OF P(+) POROUS SILICON

In this work, we present the electrical properties of metal/p(+) porou s silicon (PS)/p(+) c-Si/Au cells with the PS layers prepared by diffe rent anodization conditions. It is shown that the anodization paramete rs affect the geometrical interconnections of these PS samples and the corresponding electrical properties are different from one another. D ifferent conduction characteristics, namely the Ohm's law, Schottky re ctification, Pool-Frenkel type conduction, injection power law, and po ssibly hopping transport have been observed in the samples with certai n treatments. It is suggested that the transport property of p(+) PS i s a competition among interfaces; Si interconnected channels, and surf ace channels.