ANOMALIES OF HALL-EFFECT AND MAGNETORESISTANCE IN OXYGEN-DEFICIENT LA(2 3)A(1/3)MNO(3-DELTA) EPITAXIAL LAYERS/

Citation
P. Mandal et al., ANOMALIES OF HALL-EFFECT AND MAGNETORESISTANCE IN OXYGEN-DEFICIENT LA(2 3)A(1/3)MNO(3-DELTA) EPITAXIAL LAYERS/, Physica status solidi. a, Applied research, 165(1), 1998, pp. 219-230
Citations number
41
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
165
Issue
1
Year of publication
1998
Pages
219 - 230
Database
ISI
SICI code
0031-8965(1998)165:1<219:AOHAMI>2.0.ZU;2-6
Abstract
The effect of oxygen disorder on the magnetic moment, resistivity, Hal l effect and magnetoresistance of oxygen deficient La(2/3)A(1/3)MnO(3- delta) epitaxial thin films has been studied in magnetic fields up to 20 T and temperatures down to 4.2 K. Our results show, that rho(T, H) of these thin films depends on delta but differs in detail from that o f equivalent nonstoichiometric bulk samples. In particular, changes in sign and magnitude of the magnetoresistance Delta rho/rho occur which suggest positive and negative shifts of a magnetic order-oder transit ion temperature in a magnetic field, dT(1)/dH, depending on delta. The Hall measurements give a hole carrier concentration of about 3 x 10(2 1) cm(-3) for near stoichiometric compounds.